Novel trends in SOI: UTBOX SOI and direct silicon bonding technologies
نویسندگان
چکیده
Recent trends in device design bring a need for SOI wafers with ultra thin BOX below 100A. Difficulties in production of UTBOX SOI wafer by the Smart CutTM technology are highlighted. New process of internal BOX dissolution allows to overcome interface defectivity problems and results in high quality UTBOX and DSB wafers. Mechanism of internal BOX dissolution is presented together with the results of structural and electrical characterization. Novel SOI structures based on the process are proposed. Hybrid wafers with SOI and bulk Si areas manufactured using new process are presented.
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